2SC3515 2002-08-13 1 toshiba transistor silicon npn triple diffused type (pct process) 2SC3515 high voltage control applications plasma display, nixie tube driver applications cathode ray tube brightness control applications high voltage: v cbo = 300 v, v ceo = 300 v low saturation voltage: v ce (sat) = 0.5 v (max) small collector output capacitance: c ob = 3 pf (typ.) complementary to 2sa1384 small flat package p c = 1.0 to 2.0 w (mounted on ceramic substrate) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 300 v emitter-base voltage v ebo 6 v collector current i c 100 ma base current i b 20 ma p c 500 collector power dissipation p c (note 1) 1000 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note 1: mounted on ceramic substrate (250 mm 2 0.8 mmt) unit: mm pw-mini jedec D jeita sc-62 toshiba 2-5k1a weight: 0.05 g (typ.)
2SC3515 2002-08-13 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 300 v, i e = 0 D D 0.1 a emitter cut-off current i ebo v eb = 6 v, i c = 0 D D 0.1 a collector-base breakdown voltage v (br) cbo i c = 0.1 ma, i e = 0 300 D D v collector-emitter breakdown voltage v (br) ceo i c = 1 ma, i b = 0 300 D D v h fe (1) (note 2) v ce = 10 v, i c = 20 ma 30 D 150 dc current gain h fe (2) v ce = 10 v, i c = 20 ma 20 D D D collector-emitter saturation voltage v ce (sat) i c = 20 ma, i b = 2 ma D D 0.5 v base-emitter saturation voltage v be (sat) i c = 20 ma, i b = 2 ma D D 1.0 v transition frequency f t v ce = 10 v, i c = 20 ma 50 80 D mhz collector output capacitance c ob v cb = 20 v, i e = 0, f = 1 mhz D 3 4 pf note 2: h fe (1) classification r: 30 to 90, o: 50 to 150 marking i o type name h fe classification
2SC3515 2002-08-13 3 collector-emitter voltage v ce (v) i c ? v ce (low voltage region) collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce (low voltage region) collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce (low voltage region) collector-emitter voltage v ce (v) i c ? v ce (low current region) collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce (low current region) collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce (low current region) collector current i c (ma) collector current i c (ma) 0 8 4 2 0 60 100 80 6 20 40 10 12 14 120 common emitter ta 100c i b 0 1 ma 2 1 0.6 0.4 10 7 5 0.2 4 3 0 14 0 8 4 2 0 60 100 common emitter ta 25c 80 i b 0 1 ma 6 2 1 0.8 0.6 0.5 0.4 20 40 10 12 120 10 5 3 0.3 0.2 0 0 160 80 40 0 6 10 8 120 2 4 200 240 280 12 common emitter ta 25c i b 10 a 70 60 50 40 30 20 100 90 80 0 0 8 4 2 0 60 100 80 6 20 40 10 12 14 120 common emitter ta 55c i b 0 1 ma 2 1 0.8 0.6 0.5 0.4 10 5 3 0.3 0.2 0 0 160 80 40 0 6 10 8 120 2 4 200 240 280 12 common emitter ta 100c i b 10 a 70 60 50 40 30 20 80 0 0 160 80 40 0 6 10 8 120 2 4 200 240 280 common emitter ta 55c i b 10 a 100 70 60 50 40 30 20 90 80 0
2SC3515 2002-08-13 4 f t ? i c collector current i c (ma) h fe ? i c dc current gain h fe collector current i c (ma) h fe ? i c dc current gain h fe collector current i c (ma) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (ma) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) collector current i c (ma) transition frequency f t (mhz) reverse voltage v r (v) c ib , c ob ? v r collector input capacitance c ib (pf) collector output capacitance c ob (pf) 500 100 10 5 50 30 0.1 1 30 0.3 3 10 100 common emitter ta 25c v ce 10 v 5 1 3 300 500 100 10 5 50 30 0.1 1 30 0.3 3 10 100 common emitter v ce 10 v 3 300 ta 100c 55 25 0.1 0.3 1 30 0.3 0.1 common emitter i c /i b 10 0.05 3 10 0.5 1 ta 100c 25 55 3 100 0.03 0.1 3 1 100 30 0.3 0.5 1 0.3 3 10 5 10 ta 55c 25 100 common emitter i c /i b 10 0.1 0.3 3 10 1 30 500 100 10 50 30 common emitter ta 25c 10 v ce = 20 v 5 300 0.1 10 1 0.3 1 30 100 50 3 5 10 30 100 3 300 300 c ib (i c = 0) c ob (i e = 0) f 1 mhz ta 25c
2SC3515 2002-08-13 5 p c ? ta collector power dissipation p c (w) ambient temperature ta (c) collector-emitter voltage v ce (v) safe operating area collector current i c (ma) 0 120 80 100 40 60 0 0.6 0.2 1.0 0.4 1.2 20 160 140 0.8 (1) (2) (1) mounted on ceramic substrate (250 mm 2 0.8 mmt) (2) no heat sink * : single no repetitive pulse ta 25c curves must be derated linearly with increase in temperature tested without a substrate. 1 100 10 3 0.3 50 500 300 30 3 100 300 1 0.5 10 30 1000 0.1 5 v ceo max 1 ms * 10 ms * i c max (pulse) i c max (continuous) dc operation ta 25c 100 ms *
2SC3515 2002-08-13 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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